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VS-8EWS16SPBF - Glass passivated pellet chip junction

VS-8EWS16SPBF_9042815.PDF Datasheet


 Full text search : Glass passivated pellet chip junction


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PART Description Maker
VS-80APF04-M3    Glass passivated pellet chip junction
Vishay Siliconix
FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU 50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504    12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers
25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电5A,重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器(平均整流电35A,重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流
25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
1N3207 1N3064M 1N3069M 1N3206 1N897 MC001 MC002 MC PELLET DIODES 0.1 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.005 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.05 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.01 A, SILICON, SIGNAL DIODE
(1N897 - 1N899) PELLET DIODES
Signal or Computer Diode
Microsemi, Corp.
Microsemi Corporation
S1NB05-S1NB100 Glass passivated chip junctions
TY Semiconductor Co., Ltd
SB2D Glass passivated chip junction
Vishay Siliconix
30KP100SCA 30KP100SA 30KP54SA 30KP90SC 30KP90SCA 3 Glass passivated junction chip
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electronic...
Shenzhen Luguang Electr...
CPD69 1 Amp Glass Passivated Rectifier Chip
centralsemi
FM4006 FM4004 FM4005 Chip Silicon Rectifier - Glass passivated type
FORMOSA[Formosa MS]
20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE Semiconductor
BTB15B BTB15-200B V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants
TRIACS
SGS Thomson Microelectronics
STMicroelectronics
 
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